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t ga 3503 - sm 2 - 30 ghz gaas wideband gain block preliminary datasheet: rev - 09 - 08 - 1 4 - 1 of 12 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com applications ? general purpose wideband gain block ? electronic warfare ? military & commercial radar ? military communications ? commercial communications ? instrumentation product features ? frequency range: 2 C 30 ghz ? small signal gain : 10 db typical ? return loss: 12 db typical ? nf: 4 .0 db mid - band ? p1db: 19 dbm, p sat = 19 dbm at p in = 10 dbm ? otoi: > 25 dbm at pout/tone = 8 dbm ? bias: v + = 10.4 v, i dq = 135 ma, v ctrl = 2.2 v, v g = - 1 v typical ? p ac kage dimensions: 5 x 5 x 1.5 mm functional block diagram p ad configuration p ad no. symbol 1 - 4, 6 - 13, 15 - 21, 23 - 27, 29, 31 - 32 gnd 5 rf in 14 v g 22 rf out 28 v + 30 v ctrl or v g2 33 gnd ordering information part eccn description tga3503 - sm ear99 2 C 30 ghz gaas wideband gain block general description triquints tga3503 - sm is a wideband gain block with adjustable gain control giving the user extra flexibility t o fine tune system performance. operating from 2 to 30ghz, the tga3503 - sm provides 19dbm p1db and 10db of small - signal gain with return losses of greater than 12db. the tga3503 - sm is fabricated on triquints production tqpht15 0.15um gaas phemt process and is offered in a robust , 5x5mm ceramic air - cavity qfn. with integrated dc blocking caps and fully match to 50ohms, the tga3503 - sm is easily integrated in both commercial and military system architectures. lead - free and rohs compliant evaluation boards are available upon request. 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 33
t ga 3503 - sm 2 - 30 ghz gaas wideband gain block preliminary datasheet: rev - 09 - 08 - 1 4 - 2 of 12 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com absolute maximum ratings parameter value (1) bias voltage (v + ) 10.4 v drain voltage (v d ) 6 v (2) gate voltage range (v g ) - 3 to 0 v control voltage range (v ctrl ) - 3 to 3 v drain current (i d ) 150 ma gate current (i g ) - 2 to 1 0 ma power dissipation , 85 c (p diss ) 1 .4 w input power , cw, 50 , (p in ) 21 dbm channel temperature (t ch ) 20 0 c mounting temperature (30 seconds) 260 c storage temperature - 55 to 150 c notes: 1. operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. 2. assure v d C v ctrl 8 v. compute v d = v + - i dq *40 recommended operating conditions parameter value supply voltage (v + ) 10 .4 v drain voltage (v d ) 5 v drain current (i d q ) 1 35 m a gate voltage (v g ) - 1 v typical gain control voltage (v ctrl ) 2.2 v temperature (t base ) - 40 to 85 c electrical specifications are measured at specified test conditions. specifications are not guaranteed over all operating conditions. electrical specifications test conditions unless otherwise noted: 25 0 c , v + = 10 .4 v, i d q = 1 35 m a, v ctrl = 2.2 v, v g = - 1 v typical , cw parameter min typical max units operational frequency range 2 30 ghz small signal gain 10 db input return loss 12 db output return loss 12 db noise figure (at mid - band) 4 db output power at 1 db gain compression 1 9 dbm output toi at pout/tone = 8 dbm > 25 dbm gain temperature coefficient - 0.0 1 db/c
t ga 3503 - sm 2 - 30 ghz gaas wideband gain block preliminary datasheet: rev - 09 - 08 - 1 4 - 3 of 12 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) t base = 8 5 c, v + = 10 .4 v , v d = 5 v, v ctrl = 2.2 v, i dq = 135 ma, p diss = 0. 7 w 30 oc *mm /w channel temperature (t ch ) ( no rf drive) 105 c median lifetime (t m ) 2.8 x 10^ 8 hrs thermal resistance ( jc ) (1) t base = 85 c, v + = 10.4 v (cw) , v ds = 5 v, i dq = 135 ma, i d_drive = 142 ma, p in = 10 dbm, p out = 19 dbm, freq = 16 ghz, p diss = 0.62 w 30 oc *mm /w channel temperature (t ch ) (with rf drive) 105 c median lifetime (t m ) 2.8 x 10^8 hrs notes: 1. thermal resistance measured at back of the package. test conditions: v d = 6 v; failure criteria is 10% reduction in i d_max 1e+03 1e+04 1e+05 1e+06 1e+07 1e+08 1e+09 1e+10 1e+11 1e+12 1e+13 1e+14 1e+15 25 50 75 100 125 150 175 200 median lifetime, t m (hours) channel temperature, t ch ( c) median lifetime vs. channel temperature fet5
t ga 3503 - sm 2 - 30 ghz gaas wideband gain block preliminary datasheet: rev - 09 - 08 - 1 4 - 4 of 12 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com typical performance : small signal conditions unless otherwise specified: v + = 10 .4 v, i dq = 135 ma, v ctrl = 2.2 v, v g = - 1 v typical , cw , 25 c 0 3 6 9 12 15 1 4 7 10 13 16 19 22 25 28 31 s21 (db) frequency (ghz) gain vs. frequency vs. temperature 85 c 25 c - 40 c 0 3 6 9 12 15 1 4 7 10 13 16 19 22 25 28 31 s21 (db) frequency (ghz) gain vs. frequency vs. control voltage 0.5 v 2.2 v 0 v 1.0 v 1.5 v -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 1 4 7 10 13 16 19 22 25 28 31 s11 (db) frequency (ghz) input return loss vs. frequency vs. temp. 85 c 25 c - 40 c -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 3 6 1 4 7 10 13 16 19 22 25 28 31 s22 (db) frequency (ghz) output return loss vs. frequency vs. temp. 85 c 25 c - 40 c -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 1 4 7 10 13 16 19 22 25 28 31 s22 (db) frequency (ghz) orl vs. frequency vs. control voltage 0.5 v 2.2 v 0 v 1.0 v 1.5 v 3 4 5 6 7 8 9 10 11 2 6 10 14 18 22 26 30 noise figure (db) frequency (ghz) noise figure vs. frequency
t ga 3503 - sm 2 - 30 ghz gaas wideband gain block preliminary datasheet: rev - 09 - 08 - 1 4 - 5 of 12 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com typical performance : large signal c onditions unless otherwise specified: v + = 10.4 v, i dq = 135 ma, v ctrl = 2.2 v, v g = - 1 v typical , cw, 25 c 15 18 21 24 0 5 10 15 20 25 30 p1db (dbm) frequency (ghz) p1db vs. frequency temp = 25 c 12 15 18 21 24 0 5 10 15 20 25 30 p sat (dbm) frequency (ghz) p sat vs. frequency pin = 10 dbm, temp = 25 c 0 3 6 9 12 15 18 21 24 -5 0 5 10 15 p out (dbm) p in (dbm) output power vs. input power vs. frequency 2ghz 6ghz 10ghz 14ghz 18ghz 22ghz 26ghz 30ghz temp = 25 c 0 3 6 9 12 -5 0 5 10 15 gain (db) p in (dbm) gain vs. input power vs. frequency 2ghz 6ghz 10ghz 14ghz 18ghz 22ghz 26ghz 30ghz temp = 25 c
t ga 3503 - sm 2 - 30 ghz gaas wideband gain block preliminary datasheet: rev - 09 - 08 - 1 4 - 6 of 12 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com typical performance : large signal c onditions unless otherwise specified: v + = 10.4 v, i dq = 135 ma, v ctrl = 2.2 v, v g = - 1 v typical , cw , 25 c 130 135 140 145 150 155 160 165 170 175 -5 0 5 10 15 drain current (ma) p in (dbm) drain current vs. input power vs. frequency 2ghz 6ghz 10ghz 14ghz 18ghz 22ghz 26ghz 30ghz -4.72 -4.71 -4.70 -4.69 -4.68 -4.67 -4.66 -5 0 5 10 15 gate current (ma) p in (dbm) gate current vs. input power vs. frequency 2ghz 6ghz 10ghz 14ghz 18ghz 22ghz 26ghz 30ghz -0.5 0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 11.5 12.5 -5 0 5 10 15 control current (ma) p in (dbm) control current vs. input power vs. freq. 2ghz 6ghz 10ghz 14ghz 18ghz 22ghz 26ghz 30ghz
t ga 3503 - sm 2 - 30 ghz gaas wideband gain block preliminary datasheet: rev - 09 - 08 - 1 4 - 7 of 12 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com typical performance: linearity c onditions unless otherwise specified: v + = 10.4 v, i dq = 135 ma, v ctrl = 2.2 v, v g = - 1 v typical , cw, 25 c 20 23 26 29 32 35 38 2 6 10 14 18 22 26 30 otoi (dbm) frequency (ghz) otoi vs. frequency vs. temperature 85 c 25 c - 40 c pout/tone = 8 dbm, 10 mhz tone spacing 20 23 26 29 32 35 38 -10 -5 0 5 10 15 20 otoi (dbm) output power/tone (dbm) otoi vs. output power vs. frequency 2ghz 6ghz 10ghz 14ghz 18ghz 22ghz 26ghz 30ghz -66 -63 -60 -57 -54 -51 -48 -45 -42 -39 -36 -33 -30 2 6 10 14 18 22 26 30 im3 (dbc) frequency (ghz) im3 vs. frequency vs. temperature 85 c 25 c - 40 c pout/tone = 8 dbm, 10 mhz tone spacing -66 -63 -60 -57 -54 -51 -48 -45 -42 -39 -36 -33 -30 2 6 10 14 18 22 26 30 im5 (dbc) frequency (ghz) im5 vs. frequency vs. temperature 85 c 25 c - 40 c pout/tone = 8 dbm, 10 mhz tone spacing -80 -74 -68 -62 -56 -50 -44 -38 -32 -26 -20 -10 -5 0 5 10 15 20 im3 (dbc) output power/tone (dbm) im3 vs. output power vs. frequency 2ghz 6ghz 10ghz 14ghz 18ghz 22ghz 26ghz 30ghz -92 -86 -80 -74 -68 -62 -56 -50 -44 -38 -32 -10 -5 0 5 10 15 20 im5 (dbc) output power/tone (dbm) im5 vs. output power vs. frequency 2ghz 6ghz 10ghz 14ghz 18ghz 22ghz 26ghz 30ghz
t ga 3503 - sm 2 - 30 ghz gaas wideband gain block preliminary datasheet: rev - 09 - 08 - 1 4 - 8 of 12 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com application information bias - up procedure 1. set i d limit to 15 0 ma , i g lim it to 10 ma 2. apply - 3 v to v g for pinch off 3. apply desired value to v ctrl 4. apply +5 v to v + 5 . set v g more positive until i dq = 100 ma (v g ~ - 1 v typical) 5 . adjust v + to +10.4v , resulting in v d = 5 v 7 . adjust v g for i dq = 135 ma 8 . apply rf signal bias - down procedure 1. turn off rf signal 2. reduce v g to set i dq to 100 ma. 3. set v + to 5 v 4 . reduce v g to - 3 v. ensure i dq ~ 0 ma 5 . turn off v ctrl supply 6 . set v + to 0 v 7 . turn off v g supply pin description p in n o. symbol description 1 - 4, 6 - 13, 15 - 21, 23 - 27, 29, 31 - 32 gnd recommend grounding on pcb 5 rf in input; matched to 50 ; dc blocked 1 4 v g gate voltage; b ias network is required; see recommended application information above. 22 rf out output ; matched to 50 ; dc blocked 28 v + drain voltage; b ias network is required; see recommended application information above. 30 v ctrl or v g2 gain control voltage; bias network is require d ; see recommended application information above. 33 gnd ground paddle. multiple vias should be employed to minimize inductance and thermal resistance. 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 33 rf in rf out v + r 2 c 8 c 2 v g r 6 c 12 c 6 v ctrl r 1 c 7 c 1
t ga 3503 - sm 2 - 30 ghz gaas wideband gain block preliminary datasheet: rev - 09 - 08 - 1 4 - 9 of 12 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com evaluation board bill of material reference des. value description manuf. part number c1, c2 , c6 1 f cap, 0402, 50 v, 10%, x7r various c3, c4, c5 0 ohms res, 0402 , 5% (required for above evb design) various c7, c8, c12 2.2 f res, 1206 , 50 v, 10 % , x7r various r1, r2, r6 1 5 ohms res, 0 402 , 50 v, 5% various c4 c5 c6 c1 c2 c3 r6 c12 c8 c7 r1 r2 v ctrl v + gnd v g gnd gnd
t ga 3503 - sm 2 - 30 ghz gaas wideband gain block preliminary datasheet: rev - 09 - 08 - 1 4 - 10 of 12 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com mechanical information units: inches tolerances: unless specified x.xx = 0.01 x.xxx = 0.005 materials: base: aluminum nitride all metalized features are au plated part is mold encapsulated marking: 3503 : part number yy: part assembly year ww: part assembly week m xxx: batch id
t ga 3503 - sm 2 - 30 ghz gaas wideband gain block preliminary datasheet: rev - 09 - 08 - 1 4 - 11 of 12 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com recommended soldering temperature profile
t ga 3503 - sm 2 - 30 ghz gaas wideband gain block preliminary datasheet: rev - 09 - 08 - 1 4 - 12 of 12 - disclaimer: subject to change without notice ? 201 4 triquint www.triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change witho ut notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent r ights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving , or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint : web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for tech nical questions and application information: email: info - products@triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability compatible with the latest version of j - std - 020 lead - free solder, 260 c. rohs compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free msl rating level tbd at tbdc convection reflow the part is rated moisture sensitivity level tbd at tbdc per jedec standard ipc/jedec j - std - 020. eccn us department of commerce : ear99

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